2009. 11. 11 1/8 semiconductor technical data KGT15N120NDA revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features ? high speed switching ? high system efficiency ? soft current turn-off waveforms ? extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ?? 20 v collector current @t c =25 i c 30 a @t c =100 15 a pulsed collector current i cm * 45 a diode continuous forward current @t c =100 i f 15 a diode maximum forward current i fm 45 a maximum power dissipation @t c =25 p d 200 w @t c =100 80 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r jc 0.6 ? /w thermal resistance, junction to case (diode) r jc 2.8 ? /w thermal resistance, junction to ambient r ja 40 ? /w thermal characteristic e c g to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 1. gate 2. collector 3. emitter 0.60+0.15-0.05 15.60 0.20 + 4.80 0.20 + + + + + + + + + + + + + + + 3.20 0.10 + 18.70 0.20 +
2009. 11. 11 2/8 KGT15N120NDA revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1.0ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ?? 20v - - ?? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =15ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =15a - 1.90 2.30 v v ge =15v, i c =15a, t c = 125 ? - 2.25 - v v ge =15v, i c =30a - 2.35 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 15a - 115 170 nc gate-emitter charge q ge - 13 - nc gate-collector charge q gc - 40 - nc turn-on delay time t d(on) v cc =600v, i c =15a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 50 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 260 - ns fall time t f - 100 180 ns turn-on switching loss e on - 2.7 4.0 mj turn-off switching loss e off - 0.55 0.90 mj total switching loss e ts - 3.25 4.90 mj turn-on delay time t d(on) v cc =600v, i c =15a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 50 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 270 - ns fall time t f - 150 - ns turn-on switching loss e on - 2.9 4.2 mj turn-off switching loss e off - 0.8 1.2 mj total switching loss e ts - 3.7 5.4 mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 1900 - pf ouput capacitance c oes - 80 - pf reverse transfer capacitance c res - 55 - pf
2009. 11. 11 3/8 KGT15N120NDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 15a t c =25 - 1.8 2.5 v t c =125 - 1.9 - diode reverse recovery time t rr i f = 15a di/dt = 200a/ s t c =25 - 230 300 ns t c =125 - 270 - diode peak reverse recovery current i rr t c =25 - 24 31 a t c =125 - 27 - diode reverse recovery charge q rr t c =25 - 2400 4000 nc t c =125 - 3640 -
2009. 11. 11 4/8 KGT15N120NDA revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 46 5 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 16 12 4 8 08 20 41216 0246810 0 20 40 60 80 100 120 140 160 180 40 30 20 10 70 80 60 50 0 25 50 2.0 1.5 2.5 3.5 3.0 75 100 125 case temperature t c ( ) c 1 10 40 capacitance (pf) 0 500 1500 1000 2500 3000 3500 2000 fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics common emitter v ge = 15v t c = t c = 25 c 125 c common emitter v ge = 15v 20v 16v 10v 12v 15v i c = 30a i c = 15a common emitter t c = 25 c i c = 7.5a 30a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 16 12 4 8 08 20 41216 common emitter t c = 125 c common emitter v ge = 0v, f = 1mhz t c = 25 c i c = 7.5a 30a ciss coss crss ?? t c =25 c common emitter 15a 15a typical performance characteristics
2009. 11. 11 5/8 KGT15N120NDA revision no : 0 collector current i c ( ) switching time (ns) 010 30 20 100 10 tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) tf td(off) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 010 20 15 25 30 0.1 10.0 1.0 fig 12. switching loss vs. collector current e(off) e(on) e(off) e(on) fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0204 060 10 30 50 70 10 100 tr td(on) 0204060 10 30 50 70 10 100 1000 tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 70 0.1 1 10 51525 10 20 30 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v cc = 600v, v ge = 15v i c = 15a t c = 25 t c = c 125 c common emitter v cc = 600v, v ge = 15v i c = 15a t c = t c = c 125 c common emitter v cc = 600v, v ge = 15v i c = 15a t c = t c = c 125 c 25 25 typical performance characteristics (continued)
2009. 11. 11 6/8 KGT15N120NDA
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